34 0

Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure

Title
Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Devices with a Separated Double-Gate Saddle-Type Structure
Author
김태환
Keywords
NAND Flash Memory; Saddle; Double-Gate; SONOS; Two-Bit/Cell; NVM
Issue Date
2011-02
Publisher
AMER SCIENTIFIC PUBLISHERS, 25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,권: 11 호: 2 페이지: 1337-1341
Abstract
Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon flash memory devices based on a separated double-gate (SDG) saddle structure with a recess channel region had two different doping regions in silicon-fin channel to operate two-bit per cell. A simulation results showed that the short channel effect, the cross-talk problem between cells, and the increase in threshold voltage distribution were minimized, resulting in the enhancement of the scaling-down characteristics and the program/erase speed.
URI
http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000002/art00066;jsessionid=36wj0d6mpm405.x-ic-live-01http://repository.hanyang.ac.kr/handle/20.500.11754/72772
ISSN
1533-4880
DOI
10.1166/jnn.2011.3373
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE