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dc.contributor.author정영대-
dc.date.accessioned2018-07-24T08:28:21Z-
dc.date.available2018-07-24T08:28:21Z-
dc.date.issued2011-01-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; JAN 2011, 11 1, p528-p532, 5p.en_US
dc.identifier.issn1533-4880-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00090-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/72757-
dc.description.abstractPhotoresist lithography has been applied to the fabrication of micro/nano devices, such as microfluidic structures, quantum dots, and photonic devices, in MEMS (micro-electro mechanical systems) and NEMS (nano-electro-mechanical systems). In particular, nano devices can be expected to present different physical phenomena due to their three-dimensional (3D) structure. The flexible 3D micro/nano fabrication technique and its process simulation have become among the major topics needed to understand nano-mechanical phenomena. For this purpose, the moving-mask technology and the lithography processes for the positive- and negative-tone photoresists were modeled. The validity of the simulation of the proposed 3D nano/microstructuring was successfully confirmed by comparing the experiment results and the simulated results. Hence, the developed model and the simulation can present and optimize photoresist characteristics and lithography process conditions due to the various 3D nano/microstructures. They could be help in the understanding of nanomaterial and mechanical phenomena.en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USAen_US
dc.subjectLithographyen_US
dc.subjectLithography Simulationen_US
dc.subjectNegative Resisten_US
dc.subjectChemically Amplified Resisten_US
dc.subjectMulti-Exposuresen_US
dc.subjectInverse Lithographyen_US
dc.subjectEmbedded Channelsen_US
dc.subjectMEMSen_US
dc.titleAdvanced Lithography Simulation for Various 3-Dimensional Nano/Microstructuring Fabrications in Positive- and Negative-Tone Photoresistsen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume11-
dc.identifier.doi10.1166/jnn.2011.3288-
dc.relation.page528-532-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorKim, Sang-Kon-
dc.contributor.googleauthorOh, Hye-Keun-
dc.contributor.googleauthorJung, Young-Dae-
dc.contributor.googleauthorAn, Ilsin-
dc.relation.code2011214452-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidydjung-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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