38 0

Memory Effects of Nonvolatile Memory Devices with a Floating Gate Fabricated Utilizing Ag Nanoparticles Embedded into a Polymethylmethacrylate Layer

Title
Memory Effects of Nonvolatile Memory Devices with a Floating Gate Fabricated Utilizing Ag Nanoparticles Embedded into a Polymethylmethacrylate Layer
Author
김태환
Keywords
Nonvolatile Memory Device; Operating Mechanisms; Ag Nanoparticle; PMMA; C-V Hysteresis
Issue Date
2011-01
Publisher
AMER SCIENTIFIC PUBLISHERS, 25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; JAN 2011, 11 1, p791-p795, 5p.
Abstract
Nonvolatile memory devices based on a polymethylmethacrylate (PMMA) layer containing Ag nanoparticles were formed by using a spin coating method. High-resolution transmission electron microscopy images showed that Ag nanoparticles were randomly distributed in the PMMA layer. Capacitance voltage (C-V) curves for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device at 300 K showed a hysteresis with a large flat-band voltage shift, indicative of the Ag nanoparticles acting as the charge storage in the memory device. The magnitude of the flat-band voltage shift for the memory devices increased with increasing Ag nanoparticle concentration. The operating mechanisms for the writing and the erasing processes for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device are described on the basis of the C-V results and electronic structures.
URI
http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00147#http://repository.hanyang.ac.kr/handle/20.500.11754/72742
ISSN
1533-4880
DOI
10.1166/jnn.2011.3169
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE