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Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Title
Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
Author
박진성
Keywords
Plasma-Enhanced Atomic Layer Deposition; Oxygen Diffusion Barrier; Ruthenium-Titanium Nitride; FRAM; DRAM
Issue Date
2011-01
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; JAN 2011, 11 1, p671-p674, 4p.
Abstract
Ru-TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru-TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TIN thin films have a polycrystalline structure, the microstructure of the Ru-TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru-0.67-TiN0.33 thin films is sufficiently low at 190 mu Omega.cm and was maintained even after O-2 annealing at 750 degrees C. Therefore, Ru-TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.
URI
http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00121http://repository.hanyang.ac.kr/handle/20.500.11754/72735
ISSN
1533-4880
DOI
10.1166/jnn.2011.3222
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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