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Room-Temperature H-2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

Title
Room-Temperature H-2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
Author
좌용호
Keywords
graphene-doped porous silicon; p-type silicon; hydrogen sensor; sensing mechanism; HYDROGEN SENSOR; PALLADIUM NANOPARTICLES
Issue Date
2017-11
Publisher
MDPI AG
Citation
SENSORS, v. 17, No. 12, Article no. 2750
Abstract
In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H-2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H-2 sensor that was operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect that is generated from the interface between the graphene and p-type silicon.
URI
http://www.mdpi.com/1424-8220/17/12/2750/htmhttps://repository.hanyang.ac.kr/handle/20.500.11754/72579
ISSN
1424-8220
DOI
10.3390/s17122750
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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