Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film
- Title
- Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film
- Author
- 송윤흡
- Keywords
- time-dependent dielectric breakdown; MgO; magnetic tunnel junctions; reliability modeling; temperature
- Issue Date
- 2016-06
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 31, NO 7, Page. 1-10
- Abstract
- Temperature dependence of the reliability characteristics of magnetic tunnel junctions (MTJs) with a thin (similar to 1 nm thick) MgO dielectric film were investigated by numerical analyses based on the E-model, 1/E-model, and power-law voltage V-model, as well as by measuring time-dependent dielectric breakdown (TDDB) degradation. Although the tunneling process giving rise to TDDB is still under debate, the temperature dependence of TDDB was much weaker using the 1/E model than the E-model or power-law model. The TDDB data measured experimentally in CoFeB/MgO/CoFeB MTJ devices also showed rather weak temperature dependence, in good agreement with the numerical results obtained from the 1/E-model considering the self-heating effect in MTJ devices. Moreover, we confirmed by interval voltage stress tests that some degradation in the MgO dielectric layer occurred. Based on our findings, we suggest that to characterize the reliability of MTJs, combined temperature measurements of TDDB and 1/E-model analyses taking the self-heating effect into account should be performed.
- URI
- http://iopscience.iop.org/article/10.1088/0268-1242/31/7/075004/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/72442
- ISSN
- 0268-1242; 1361-6641
- DOI
- 10.1088/0268-1242/31/7/075004
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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