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dc.contributor.author오혜근-
dc.date.accessioned2018-07-05T01:36:01Z-
dc.date.available2018-07-05T01:36:01Z-
dc.date.issued2017-09-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, No. 10, Article no. 106501en_US
dc.identifier.issn0021-4922-
dc.identifier.issn1347-4065-
dc.identifier.urihttp://iopscience.iop.org/article/10.7567/JJAP.56.106501/meta-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/72360-
dc.description.abstractExtreme ultraviolet (EUV) pellicles help in the protection of EUV masks from defects, contaminants, and particles during the exposure process. However, a single-stack EUV pellicle can be easily deformed during the exposure process; therefore, multi-stack pellicles have been proposed to minimize the deformation of an EUV pellicle. However, wrinkles can be formed in an EUV pellicle due to extremely thin thickness. In this study, we investigated the impact of these wrinkles on the transmission and critical dimension (CD) variation for the 5- and 3-nm nodes. The 5- and 3-nm nodes can be used by conventional and high numerical aperture (NA) systems, respectively. The variation in the transmission and the allowable local tilt angle of the wrinkle as a function of the wrinkle height and periodicity were calculated. A change in transmission of 2.2% resulted in a 0.2nm variation in the CD for the anamorphic NA system (3-nm node), whereas a transmission variation of 1.6% caused a 0.2nm CD variation in the isomorphic NA system (5-nm node). (C) 2017 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis work was supported by the Future Semiconductor Device Technology Development Program No. 10045366 funded by MOTIE (Ministry of Trade, Industry and Energy) and KSRC (Korea Semiconductor Research Consortium).en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.titleCritical dimension variation caused by wrinkle in extreme ultra-violet pellicle for 3-nm nodeen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.56.106501-
dc.relation.page1-8-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorKim, Guk-Jin-
dc.contributor.googleauthorKim, In-Seon-
dc.contributor.googleauthorLee, Sung-Gyu-
dc.contributor.googleauthorYeung, Michael-
dc.contributor.googleauthorKim, Min-Su-
dc.contributor.googleauthorPark, Jin-Goo-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2017000941-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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