101 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author김재균-
dc.date.accessioned2018-06-29T04:15:48Z-
dc.date.available2018-06-29T04:15:48Z-
dc.date.issued2017-08-
dc.identifier.citationRSC ADVANCES, v. 7, No. 61, Page. 38166-38170en_US
dc.identifier.issn2046-2069-
dc.identifier.urihttp://pubs.rsc.org/-/content/articlehtml/2017/ra/c7ra07193k-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/72276-
dc.description.abstractElectron occupation of the lowest electronic state of the conduction band (1S(e)) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S(e) gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of similar to 1.29 cm(2) V-1 s(-1) measured in a mercury sulfide (beta-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.en_US
dc.description.sponsorshipThis work is supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, & Future Planning (NRF-2016R1C1B2013416), the Ministry of Education (NRF20100020209) and the NRF grant funded by the Korea government (MSIP) (No. 2015R1C1A1A01052720).en_US
dc.language.isoen_USen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectFIELD-EFFECT TRANSISTORSen_US
dc.subjectNANOCRYSTAL SOLIDSen_US
dc.subjectRELAXATIONen_US
dc.subjectLIGANDSen_US
dc.subjectFILMSen_US
dc.titleHigh electron mobility of beta-HgS colloidal quantum dots with doubly occupied quantum statesen_US
dc.typeArticleen_US
dc.relation.no61-
dc.relation.volume7-
dc.identifier.doi10.1039/c7ra07193k-
dc.relation.page38166-38170-
dc.relation.journalRSC ADVANCES-
dc.contributor.googleauthorKim, Jaekyun-
dc.contributor.googleauthorYoon, Bitna-
dc.contributor.googleauthorKim, Jaehyun-
dc.contributor.googleauthorChoi, Yunchang-
dc.contributor.googleauthorKwon, Young-Wan-
dc.contributor.googleauthorPark, Sung Kyu-
dc.contributor.googleauthorJeong, Kwang Seob-
dc.relation.code2017009490-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidjaekyunkim-


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE