Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2018-06-19T07:14:42Z | - |
dc.date.available | 2018-06-19T07:14:42Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v. 181, Page. 1-9 | en_US |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0167931717302988 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72159 | - |
dc.description.abstract | The impact of non-ideal absorber sidewall angle (SWA) has been a serious problem as target pattern sizes have been reduced. During mask fabrication, it is difficult to obtain an absorber sidewall angle of 90 degrees due to the imperfect etching process. Furthermore, it is known that repeated mask cleaning processes can worsen this problem. We investigated various patterning results of non-ideal absorbers with sidewall angles < 90 degrees. Moreover, we simulated how this affects anamorphic high-numerical aperture (NA) patterning for targeted patterns of 7 nm node and smaller. The resist critical dimension (CD) can be varied by about 20% with a 5 degrees variation in the SWA for a horizontal 1 6 nm 1:1 periodic line and space pattern compared to a target CD. For an anamorphic high-NA system, the CD variation caused by the SWA effect is larger in the vertical direction than it is in the horizontal direction due to the asymmetric reduction ratio on the anamorphic mask (4x/8y), which is different from the isomorphic mask (4x/4y). Thus, we must determine the horizontal-vertical bias (H-V bias) generated by non ideal absorbers in the anamorphic system. Decreasing the SWA from 90 degrees to 85 degrees increased the HV bias of a 10 nm 1:1 line and space pattern by 52%. (C) 2017 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was partially supported by the Samsung Electronics mask development team and partially supported by the Future Semiconductor Device Technology Development Program #10045366 funded By MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) (10445366). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | EUVL | en_US |
dc.subject | EUV mask | en_US |
dc.subject | Absorber | en_US |
dc.subject | High NA | en_US |
dc.subject | Sidewall angle | en_US |
dc.title | Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography | en_US |
dc.type | Article | en_US |
dc.relation.no | 2017 | - |
dc.relation.volume | Microelectronic Engineering | - |
dc.identifier.doi | 10.1016/j.mee.2017.06.007 | - |
dc.relation.page | 1-9 | - |
dc.relation.journal | MICROELECTRONIC ENGINEERING | - |
dc.contributor.googleauthor | Ko, Ki-Ho | - |
dc.contributor.googleauthor | Moon, Yongseung | - |
dc.contributor.googleauthor | Jeong, Changyeong | - |
dc.contributor.googleauthor | Kim, Heebom | - |
dc.contributor.googleauthor | Jeon, Chan-Uk | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2017001998 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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