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Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes

Title
Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes
Author
심종인
Keywords
Electroluminescence; metrology; light-emitting diode; epi-wafer; Q-check system; LEDS
Issue Date
2016-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE JOURNAL OF QUANTUM ELECTRONICS, v. 52, No. 11, Article no. 3300406
Abstract
We present a reliable and fast characterization system that measures the electroluminescence (EL) of light-emitting diodes (LEDs) at the epi-wafer level. This "EL Q-check system" requires simple pre-processes for the measurement, circumventing the full chip-fabrication processes. The developed EL Q-check system consists of three parts: a CO2 laser for p-GaN ablation, a diamond knife for delineating the measurement area on the wafer and isolating the damaged area during the CO2 laser ablation, and the actual EL measurement on the wafer. The accuracy and the usefulness of the EL Q-check system are experimentally tested with eleven LED wafers of different crystal qualities by comparing the EL performances from the proposed system with those of the fully fabricated LED chips. For this purpose, the same wafers were divided in half and test patterns and LED chips were processed, respectively. A surprisingly good correlation between the results obtained by two methods indicates that the developed EL Q-check system can be used for accurate, reliable, and fast epi-wafer evaluation.
URI
https://ieeexplore.ieee.org/abstract/document/7565506/http://repository.hanyang.ac.kr/handle/20.500.11754/71307
ISSN
0018-9197; 1558-1713
DOI
10.1109/JQE.2016.2608798
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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