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Raman spectroscopic image analysis on micropatterned graphene

Title
Raman spectroscopic image analysis on micropatterned graphene
Author
안진호
Keywords
band structure; chemical vapour deposition; electron beam lithography; Raman spectra; spectral line breadth; spectral line intensity; graphene; Raman spectroscopic image analysis; micropatterned graphene; chemical vapour deposition; electron beam lithography; microscopic behaviour; Raman spectrum; image mapping; 2D peak; D-band signal; defect concentration; 2D-band line width; electronic band structure; confined size; 2D-band intensity; G-band intensity; laser beam spot size; effective area generating signal; size 0; 1 mum to 4 mum; C; SCATTERING
Issue Date
2013-04
Publisher
IET
Citation
Micro & Nano Letters, 2013, 8(7), P.362-365
Abstract
A study has been conducted on patterned graphene with widths in the range of 0.1-4 m which was grown by chemical vapour deposition and patterned by electron beam lithography. The microscopic behaviour of the Raman spectrum was investigated using image mapping from Raman spectroscopic data. Among three main peaks (D-band, G-band and 2D-band), the two-dimensional (2D) peak was clear even in 200 nm width graphene, however the D-band signal was very weak, confirming low defect concentration. It was found that the 2D-band line width was decreased as the width became narrower, which was explained by refining the electronic band structure because of confined sample size. The 2D- and G-band intensities were decreased by reducing the width because the laser beam spot size was greater than the width of the sample and the effective area generating the signal was reduced.
URI
http://ieeexplore.ieee.org/document/6568529/https://repository.hanyang.ac.kr/handle/20.500.11754/71065
ISSN
1750-0443
DOI
10.1049/mnl.2013.0160
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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