Three-dimensional analysis of temperature distributions based on circuit modeling of light-emitting diodes

Abstract

Thermal circuit modeling is successfully established and utilized for analyzing the temperature distribution within each epitaxial film of InGaN/GaN multiple-quantum-well blue light-emitting diodes (LEDs). The temperature distribution based on the infrared (IR) intensity from the LED surface is also calculated by applying the known emissivity and transmittance values for each epitaxial material to the simulated results. We measure the temperature distribution by using an IR camera on the LED surface and demonstrate that the simulated and measured temperature distributions have very similar distribution tendencies.