Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-04-26T08:34:32Z | - |
dc.date.available | 2018-04-26T08:34:32Z | - |
dc.date.issued | 2014-07 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS,Vol.116 No.3, pp.033904 - | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://aip.scitation.org/doi/pdf/10.1063/1.4887352 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/70874 | - |
dc.description.abstract | We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J(ex)) of a [Co/Pd](n)-synthetic-anti-ferro-magnetic layer fabricated with Co2Fe6B2/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J(ex) peaked at a certain Ru spacer-thickness: specifically, a J(ex) of 0.78 erg/cm(2) at 0.6 nm, satisfying the J(ex) criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J(ex) rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J(ex) criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co2Fe6B2 free layer/MgO tunneling barrier/Co2Fe6B2 pinned layer, although Co2Fe6B2/MgO based p-MTJ spin-valves ex-situ annealed at 275 degrees C achieved a TMR of similar to 70% at a RA of similar to 20 Omega mu m(2). (C) 2014 AIP Publishing LLC. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA | en_US |
dc.title | Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd](n)-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer | en_US |
dc.title.alternative | Pd](n)-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 116 | - |
dc.identifier.doi | 10.1063/1.4887352 | - |
dc.relation.page | 33904-33904 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Chae, Kyo-Suk | - |
dc.contributor.googleauthor | Shim, Tae-Hun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2014032385 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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