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Characterization of nano-scale strained silicon-on-insulator substrates by multi-wavelength high resolution micro-raman and optical reflectance

Title
Characterization of nano-scale strained silicon-on-insulator substrates by multi-wavelength high resolution micro-raman and optical reflectance
Author
박재근
Keywords
Strained Si; sSOI; SOI; Multi-wavelength; Raman; Reflectance; Strain; SI; SPECTROSCOPY; SCATTERING; LAYERS
Issue Date
2014-02
Publisher
KOREAN ASSOC CRYSTAL GROWTH, INC, SUNGDONG POST OFFICE, P O BOX 27, SEOUL 133-600, SOUTH KOREA
Citation
JOURNAL OF CERAMIC PROCESSING RESEARCH ,15(1),p.53-56
Abstract
Strained silicon-on-insulator (sSOI) substrates were characterized using multi-wavelength, high resolution, polychromator-based micro Raman spectroscopy and normal incidence optical reflectance spectra measurement. Significant Raman shifts towards the lower wavenumber side, corresponding to tensile stress, and broadening of the Raman peak in sSOI thin films were observed. The stress and crystallinity of sSOI were characterized from the shift and full-width-at-half-maximum data. The thickness of strained Si and buried oxide film of sSOI was estimated from the optical reflectance. Multi-wavelength Raman and optical reflectance measurement, when used together provide a useful and practical non-destructive stress, and structural characterization technique for nano-scale sSOI.
URI
http://jcpr.kbs-lab.co.kr/file/JCPR_vol.15_2014/JCPR15-1/12.pdfhttp://repository.hanyang.ac.kr/handle/20.500.11754/70662
ISSN
1229-9162
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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