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Characterization of the Co film deposited by MOCVD using dicobalt (Hexacarbonyl) tert-butylacetylene and the CoSi2 film formed by a two-step annealing process with a Ti capping layer

Title
Characterization of the Co film deposited by MOCVD using dicobalt (Hexacarbonyl) tert-butylacetylene and the CoSi2 film formed by a two-step annealing process with a Ti capping layer
Author
전형탁
Keywords
Metal-organic chemical vapor deposition (MOCVD); Co; CoSi2; Ti capping layer
Issue Date
2012-12
Publisher
KOREAN ASSOC CRYSTAL GROWTH, INC, SUNGDONG POST OFFICE, P O BOX 27, SEOUL 133-600, SOUTH KOREA
Citation
JOURNAL OF CERAMIC PROCESSING RESEARCH, 13, 5, 595-600
Abstract
We investigated the effects of a Ti capping layer on the formation of a CoSi2 film by using a two-step annealing process. The Co films were deposited by a metal-organic chemical vapor deposition (MOCVD) method using dicobalt hexcarbonyl tert-butylacetylene (C12H10O6(Co)(2), CCTBA) as the Co precursor with H-2 reactant gas under optimized process condition. Then a Ti capping layer was deposited on the Co film by electron beam evaporation. The Ti capping layer captures oxygen which is present in the interface and film, and protects the silicide from oxygen contamination during Co silicidation. The Ti capping layer also affected the formation of smooth and uniform CoSi2 films during the silicide reaction. The two-step annealing process was chosen to form the CoSi2 phase. After the first annealing process for forming the Co2Si or CoSi phases, a selective etching was utilized to remove any remaining metal such as unreacted Co and the Ti capping layer. A second annealing process was finally performed to transform from the highly resistive CoSi to the low resistive CoSi2.
URI
https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002328798http://repository.hanyang.ac.kr/handle/20.500.11754/70642
ISSN
1229-9162
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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