Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-04-25T09:31:18Z | - |
dc.date.available | 2018-04-25T09:31:18Z | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY,Vol.58, No.6 [2011],1633-1637(5쪽) | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://www.jkps.or.kr/journal/view.html?volume=58&number=6&spage=1633&year=2011 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/70435 | - |
dc.description.abstract | We determined the effects of the evaporation rate of the Ni layer and the presence of in-situ O<SUB>2</SUB> plasma oxidation on the physical and the chemical structures of Ni nanocrystals embedded in smallmolecule (Alq_3: aluminum tris(8-hydroxyquinoline)) memorycells. The Ni nanocrystals produced by an evaporation rate of 0.1 Å/s for the Ni layer with in-situ O_2 plasma oxidation were well isolated from one another by a NiO tunneling barrier. The small-molecule memorycell embedded with isolated Ni nanocrystals surrounded by a NiO tunneling barrier demonstrated a memory margin (I_(on)/I_(off) ratio) of ?1 × 10^3, a retention time of more than 10^5 sec, and an endurance of more than 2 × 10^2 erase-and-program cycles. | en_US |
dc.description.sponsorship | This research was supported by "The National Research Program for Terabit Nonvolatile Memory Development" sponsored by the Korean Ministry of Knowledge Economy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | 한국물리학회 | en_US |
dc.subject | Nonvolatile memory | en_US |
dc.subject | Physical structure | en_US |
dc.subject | Ni nanocrystal | en_US |
dc.subject | TUNNELING BARRIER | en_US |
dc.subject | BISTABILITY | en_US |
dc.subject | DEVICES | en_US |
dc.title | Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystals | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 58 | - |
dc.identifier.doi | 10.3938/jkps.58.1633 | - |
dc.relation.page | 1633-1637 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.contributor.googleauthor | Nam, Woo-Sik | - |
dc.relation.code | 2011205987 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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