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dc.contributor.author박재근-
dc.date.accessioned2018-04-25T09:31:18Z-
dc.date.available2018-04-25T09:31:18Z-
dc.date.issued2011-06-
dc.identifier.citationTHE JOURNAL OF THE KOREAN PHYSICAL SOCIETY,Vol.58, No.6 [2011],1633-1637(5쪽)en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttp://www.jkps.or.kr/journal/view.html?volume=58&number=6&spage=1633&year=2011-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/70435-
dc.description.abstractWe determined the effects of the evaporation rate of the Ni layer and the presence of in-situ O<SUB>2</SUB> plasma oxidation on the physical and the chemical structures of Ni nanocrystals embedded in smallmolecule (Alq_3: aluminum tris(8-hydroxyquinoline)) memorycells. The Ni nanocrystals produced by an evaporation rate of 0.1 Å/s for the Ni layer with in-situ O_2 plasma oxidation were well isolated from one another by a NiO tunneling barrier. The small-molecule memorycell embedded with isolated Ni nanocrystals surrounded by a NiO tunneling barrier demonstrated a memory margin (I_(on)/I_(off) ratio) of ?1 × 10^3, a retention time of more than 10^5 sec, and an endurance of more than 2 × 10^2 erase-and-program cycles.en_US
dc.description.sponsorshipThis research was supported by "The National Research Program for Terabit Nonvolatile Memory Development" sponsored by the Korean Ministry of Knowledge Economy.en_US
dc.language.isoenen_US
dc.publisher한국물리학회en_US
dc.subjectNonvolatile memoryen_US
dc.subjectPhysical structureen_US
dc.subjectNi nanocrystalen_US
dc.subjectTUNNELING BARRIERen_US
dc.subjectBISTABILITYen_US
dc.subjectDEVICESen_US
dc.titleEffect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystalsen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume58-
dc.identifier.doi10.3938/jkps.58.1633-
dc.relation.page1633-1637-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorPark, Jea-Gun-
dc.contributor.googleauthorNam, Woo-Sik-
dc.relation.code2011205987-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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