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Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystals

Title
Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystals
Author
박재근
Keywords
Nonvolatile memory; Physical structure; Ni nanocrystal; TUNNELING BARRIER; BISTABILITY; DEVICES
Issue Date
2011-06
Publisher
한국물리학회
Citation
THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY,Vol.58, No.6 [2011],1633-1637(5쪽)
Abstract
We determined the effects of the evaporation rate of the Ni layer and the presence of in-situ O<SUB>2</SUB> plasma oxidation on the physical and the chemical structures of Ni nanocrystals embedded in smallmolecule (Alq_3: aluminum tris(8-hydroxyquinoline)) memorycells. The Ni nanocrystals produced by an evaporation rate of 0.1 Å/s for the Ni layer with in-situ O_2 plasma oxidation were well isolated from one another by a NiO tunneling barrier. The small-molecule memorycell embedded with isolated Ni nanocrystals surrounded by a NiO tunneling barrier demonstrated a memory margin (I_(on)/I_(off) ratio) of ?1 × 10^3, a retention time of more than 10^5 sec, and an endurance of more than 2 × 10^2 erase-and-program cycles.
URI
http://www.jkps.or.kr/journal/view.html?volume=58&number=6&spage=1633&year=2011http://repository.hanyang.ac.kr/handle/20.500.11754/70435
ISSN
0374-4884
DOI
10.3938/jkps.58.1633
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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