Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation
- Title
- Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation
- Other Titles
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.6, page.1-5
- Author
- 박진구
- Keywords
- CORROSION-INHIBITORS; CLEANING SOLUTION; CU; CMP; SURFACE; ALLOY; IMPEDANCE; FILMS; ACID; 1,2,3-BENZOTRIAZOLE
- Issue Date
- 2016-05
- Publisher
- IOP PUBLISHING LTD
- Abstract
- Benzotriazole (BTA) has been used to protect copper (Cu) from corrosion during Cu chemical mechanical planarization (CMP) processes. However, an undesirable Cu-BTA complex is deposited after Cu CMP processes and it should be completely removed at post-Cu CMP cleaning for next fabrication process. Therefore, it is very important to understand of Cu-BTA complex formation behavior for its applications such as Cu CMP and post-Cu CMP cleaning. The present study investigated the effect of pH and polisher conditions on the formation of Cu-BTA complex layers using electrochemical techniques (potentiodynamic polarization and electrochemical impedance spectroscopy) and the surface contact angle. The wettability was not a significant factor for the polishing interface, as no difference in the contact angles was observed for these processes. Both electrochemical techniques revealed that BTA had a unique advantage of long-term protection for Cu corrosion in an acidic condition (pH 3). (C) 2016 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/JJAP.55.06JB01/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/70314
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.55.06JB01
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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