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Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation

Title
Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation
Other Titles
JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.6, page.1-5
Author
박진구
Keywords
CORROSION-INHIBITORS; CLEANING SOLUTION; CU; CMP; SURFACE; ALLOY; IMPEDANCE; FILMS; ACID; 1,2,3-BENZOTRIAZOLE
Issue Date
2016-05
Publisher
IOP PUBLISHING LTD
Abstract
Benzotriazole (BTA) has been used to protect copper (Cu) from corrosion during Cu chemical mechanical planarization (CMP) processes. However, an undesirable Cu-BTA complex is deposited after Cu CMP processes and it should be completely removed at post-Cu CMP cleaning for next fabrication process. Therefore, it is very important to understand of Cu-BTA complex formation behavior for its applications such as Cu CMP and post-Cu CMP cleaning. The present study investigated the effect of pH and polisher conditions on the formation of Cu-BTA complex layers using electrochemical techniques (potentiodynamic polarization and electrochemical impedance spectroscopy) and the surface contact angle. The wettability was not a significant factor for the polishing interface, as no difference in the contact angles was observed for these processes. Both electrochemical techniques revealed that BTA had a unique advantage of long-term protection for Cu corrosion in an acidic condition (pH 3). (C) 2016 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.55.06JB01/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/70314
ISSN
0021-4922; 1347-4065
DOI
10.7567/JJAP.55.06JB01
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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