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Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

Title
Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays
Author
권오경
Keywords
AMOLED DISPLAYS; DEGRADATION; DEVICES; TIME
Issue Date
2011-03
Publisher
IOP Publishing LTD
Citation
Japanese Journal of Applied Physics, 2011, 50(3)
Abstract
In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si: H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si: H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V. (c) 2011 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.1143/JJAP.50.03CC01/meta
ISSN
0021-4922
DOI
10.1143/JJAP.50.03CC01
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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