55 0

CMP defects

Title
CMP defects
Author
박진구
Issue Date
2012-03
Publisher
ECS
Citation
ECS Transactions, 2012, 44(1), P.559-564
Abstract
Particles and scratches are most wanted defects to be minimized in CMP processes. The root causes for them are mostly consumables related such as pad, slurry and diamond conditioning. The evaluation of additives in slurry is neglected in terms of their defect generation on wafer. The adhesion force can be measured between particle and wafer surface in given chemistry to select the additive which causes least particle contamination in both slurry and cleaning solutions. Also, the scratch detection and analysis are very time consuming and require advanced methodology even in wafer production facility. The lab scale scratch detection method was developed to study the effect of slurry and conditioning on wafer during CMP. In this presentation, we report the utilization of particle adhesion force on CMP process development and the detection of scratches on oxide wafer. The effect of slurry, pad and diamond conditioner on scratch formation was investigated with their classification
URI
http://ecst.ecsdl.org/content/44/1/559http://repository.hanyang.ac.kr/handle/20.500.11754/69953
ISSN
1938-5862; 1938-6737
DOI
10.1149/1.3694369
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE