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Removing W Polymer Residue from BEOL Structures using DSP+ (Dilute Sulfurec-Peroxide-HF) Mixture - A Case Study

Title
Removing W Polymer Residue from BEOL Structures using DSP+ (Dilute Sulfurec-Peroxide-HF) Mixture - A Case Study
Author
박진구
Keywords
DSP+ Chemical; NH3 Concentration; W Polymer Removal
Issue Date
2013-01
Publisher
Elsevier B.V.
Citation
Solid State Phenomena, 2013, 195, P.128~131
Abstract
As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+ (dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+ chemicals for cleaning processes also increases [.
URI
https://www.scientific.net/SSP.195.128http://repository.hanyang.ac.kr/handle/20.500.11754/69747
ISSN
1662-9779
DOI
10.4028/www.scientific.net/SSP.195.128
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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