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The Effect of Oxide and Nitride Passivation on the Behavior of In-Ga-Zn-O Thin-Film Transistors under Negative and Positive Bias Illumination Stress: A Photo-excited Charge Collection Spectroscopic Analysis

Title
The Effect of Oxide and Nitride Passivation on the Behavior of In-Ga-Zn-O Thin-Film Transistors under Negative and Positive Bias Illumination Stress: A Photo-excited Charge Collection Spectroscopic Analysis
Author
박진성
Keywords
InGaZnO; Device Instability; Passivation
Issue Date
2011-10
Publisher
KOREAN PHYSICAL SOC, 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY,59(6),3376-3379
Abstract
Two different types of In-Ga-Zn-O thin-film transistors, each passivated with SiO(x) and SiN(x), were studied under negative and positive bias illumination stress (NBIS and PBIS, respectively). Larger shifts in threshold voltage were observed in the SiN(x)-passivated device under both NBIS and PBIS. Photo-excited charge collection spectroscopy analyses suggest that the incorporation of hydrogen during the nitride deposition induces a larger concentration of sub-bandgap trap sites within the oxide semiconductor and/or at the semiconductor/dielectric interface. These are suspected to trap holes during NBIS and electrons during PBIS, which induce negative and positive shifts in the threshold voltage, respectively.
URI
http://www.jkps.or.kr/journal/view.html?volume=59&number=6&spage=3376&year=2011http://repository.hanyang.ac.kr/handle/20.500.11754/69645
ISSN
0374-4884
DOI
10.3938/jkps.59.3376
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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