54 0

The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors

Title
The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistors
Author
장재영
Keywords
SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; OXIDE SEMICONDUCTORS
Issue Date
2012-03
Publisher
Amer Physical SOC
Citation
Applied Physics Letters, 2012, 100(10), 102110
Abstract
We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3691920]
URI
https://aip.scitation.org/doi/10.1063/1.3691920http://repository.hanyang.ac.kr/handle/20.500.11754/69496
ISSN
0003-6951
DOI
10.1063/1.3691920
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE