Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승백 | - |
dc.date.accessioned | 2018-04-19T07:21:44Z | - |
dc.date.available | 2018-04-19T07:21:44Z | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | Journal of Applied Physics, 2012, 111(7), 07C722 | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.367915 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/69464 | - |
dc.description.abstract | We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 degrees and 30 degrees, at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k Omega junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679153] | en_US |
dc.description.sponsorship | This work was supported by the IT R&D program of MKE/KEIT (KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer INST Physics | en_US |
dc.subject | PERPENDICULAR-ANISOTROPY | en_US |
dc.title | Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 111 | - |
dc.identifier.doi | 10.1063/1.367915 | - |
dc.relation.page | 1-1 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Chun, S.-w. | - |
dc.contributor.googleauthor | Kim, D. | - |
dc.contributor.googleauthor | Kwon, J. | - |
dc.contributor.googleauthor | Kim, B. | - |
dc.contributor.googleauthor | Choi, S. | - |
dc.contributor.googleauthor | Lee, S.-B. | - |
dc.relation.code | 2012204664 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | sbl22 | - |
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