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Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage

Title
Multi-step ion beam etching of sub-30 nm magnetic tunnel junctions for reducing leakage and MgO barrier damage
Author
이승백
Keywords
PERPENDICULAR-ANISOTROPY
Issue Date
2012-03
Publisher
Amer INST Physics
Citation
Journal of Applied Physics, 2012, 111(7), 07C722
Abstract
We have demonstrated the fabrication of sub 30 nm magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. The multi-step ion beam etching (IBE) process performed for 18 min between 45 degrees and 30 degrees, at 500 V combined ion supply voltage, resulted in a 55 nm tall MTJ with 28 nm diameter. We used a negative tone electron beam resist as the hard mask, which maintained its lateral dimension during the IBE, allowing almost vertical pillar side profiles. The measurement results showed a tunnel magneto-resistance ratio of 13% at 1 k Omega junction resistance. With further optimization in IBE energy and multi-step etching process, it will be possible to fabricate perpendicularly oriented MTJs for future sub 30 nm non-volatile magnetic memory applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679153]
URI
https://aip.scitation.org/doi/10.1063/1.367915http://repository.hanyang.ac.kr/handle/20.500.11754/69464
ISSN
0021-8979; 1089-7550
DOI
10.1063/1.367915
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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