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Efficiency droop in AlGaInP and GaInN light-emitting diodes

Title
Efficiency droop in AlGaInP and GaInN light-emitting diodes
Author
신동수
Keywords
QUANTUM-WELL LASERS
Issue Date
2012-03
Publisher
Amer INST Physics
Citation
Applied Physics Letters, 2012, 100(11), 111106
Abstract
At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic temperatures, they show a pronounced efficiency droop. We attribute the efficiency droop in AlGaInP LEDs to electron-drift-induced reduction in injection efficiency (i.e., carrier leakage out of the active region) mediated by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, with the concentration disparity exacerbated at low temperatures. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3694044]
URI
https://aip.scitation.org/doi/10.1063/1.3694044http://repository.hanyang.ac.kr/handle/20.500.11754/69463
ISSN
0003-6951
DOI
10.1063/1.3694044
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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