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Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties

Title
Low temperature atomic layer deposited Al-doped ZnO thin films and associated semiconducting properties
Author
박진성
Keywords
OPTICAL-PROPERTIES; OXIDE; TRANSISTOR
Issue Date
2012-03
Publisher
Amer INST Physics
Citation
Journal of Vacuum Science and Technology B, 2012, 30(3), 031210
Abstract
Semiconducting Al-doped ZnO films were deposited by atomic layer deposition at low deposition temperatures of less than 100 °C and used to fabricate transistors. At deposition temperatures of less than 100 °C, the carrier concentrations of the Al:ZnO thin films were below 1018 cm-3, which corresponds to the transparent semiconducting oxide region. The reduced carrier concentrations at low deposition temperatures were attributed to the activation energy for carrier generation of ∼0.7 eV. The devices characteristics of the semiconducting Al:ZnO consisted of mobilities of 1.95 cm2/V s and on-off ratios of over 106. At a positive gate stress of less than 10 V, the Vth shift of the Al:ZnO after 3000 s was ∼3 V, which is almost 1 order of magnitude lower than that of ZnO thin-film transistors. [ABSTRACT FROM AUTHOR]
URI
https://avs.scitation.org/doi/10.1116/1.4710519http://repository.hanyang.ac.kr/handle/20.500.11754/69433
ISSN
2166-2746
DOI
10.1116/1.4710519
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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