Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이조원 | - |
dc.date.accessioned | 2018-04-19T06:35:47Z | - |
dc.date.available | 2018-04-19T06:35:47Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, 2012, 33(9), P.1231-1233 | en_US |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/6248157/ | - |
dc.description.abstract | Ge2Sb2Te5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformation. With GST as a floating gate, hysteretic behavior that is opposite of that arising from charge trapping and consistent with ferroelectric phase transition is characterized. Saturating memory window of similar to 1 V under +/-4 V cycling and retention times of hundreds of seconds constrained by depolarization are observed. Extracted remnant polarization is similar to 0.13 mu C/cm(2). The result suggests potential for embedded use with the advantages of a retention time that is competitive or better than DRAMs, a single-element transistorlike structure and technologically easy integration. | en_US |
dc.description.sponsorship | This work was supported in part by the Focus Center Research Program on Materials, Structures and Devices, by the National Science Foundation through the Center for Nanoscale Systems, by the Cornell Center for Materials Research, and by MEST through the National Program for Teralevel Nanodevices. The review of this letter was arranged by Editor D. Ha. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Depolarization field | en_US |
dc.subject | DRAM | en_US |
dc.subject | ferroelectric | en_US |
dc.subject | Ge2Sb2Te5 (GST) | en_US |
dc.subject | memory | en_US |
dc.subject | polarization | en_US |
dc.subject | single element | en_US |
dc.title | Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory | en_US |
dc.type | Article | en_US |
dc.relation.volume | 33 | - |
dc.identifier.doi | 10.1109/LED.2012.2204721 | - |
dc.relation.page | 1231-1233 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.googleauthor | Lee, Sang Hyeon | - |
dc.contributor.googleauthor | Kim, Moonkyung | - |
dc.contributor.googleauthor | Cheong, Byung-Ki | - |
dc.contributor.googleauthor | Lee, Jo-Won | - |
dc.contributor.googleauthor | Tiwari, Sandip | - |
dc.relation.code | 2012203822 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF CONVERGENCE NANOSCIENCE | - |
dc.identifier.pid | jowon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.