Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory

Title
Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory
Author
이조원
Keywords
Depolarization field; DRAM; ferroelectric; Ge2Sb2Te5 (GST); memory; polarization; single element
Issue Date
2012-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, 2012, 33(9), P.1231-1233
Abstract
Ge2Sb2Te5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformation. With GST as a floating gate, hysteretic behavior that is opposite of that arising from charge trapping and consistent with ferroelectric phase transition is characterized. Saturating memory window of similar to 1 V under +/-4 V cycling and retention times of hundreds of seconds constrained by depolarization are observed. Extracted remnant polarization is similar to 0.13 mu C/cm(2). The result suggests potential for embedded use with the advantages of a retention time that is competitive or better than DRAMs, a single-element transistorlike structure and technologically easy integration.
URI
https://ieeexplore.ieee.org/document/6248157/
ISSN
0741-3106
DOI
10.1109/LED.2012.2204721
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > CONVERGENCE NANOSCIENCE(나노융합과학과) > Articles
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