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Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

Title
Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices
Author
정희준
Keywords
RESISTIVE MEMORY; 1/F NOISE; DIFFUSION NOISE; INTEGRATION; MECHANISM; ELEMENTS; CELL
Issue Date
2016-09
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v. 6, Article no. 33967
Abstract
The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
URI
https://www.nature.com/articles/srep33967http://repository.hanyang.ac.kr/handle/20.500.11754/69312
ISSN
2045-2322
DOI
10.1038/srep33967
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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