Improved photoelectrochemical hydrogen evolution using a defect-passivated Al2O3 thin film on p-Si

Title
Improved photoelectrochemical hydrogen evolution using a defect-passivated Al2O3 thin film on p-Si
Author
이정호
Keywords
Silicon; Photocathode; Aluminum oxide interlayer; Hydrogen evolution reaction; Photoelectrochemical cell; Water splitting; ATOMIC LAYER DEPOSITION; H-2 EVOLUTION; WATER OXIDATION; SILICON; CATALYST; PHOTOCATHODE; PERFORMANCE; GENERATION; CELLS; TIO2
Issue Date
2016-09
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 616, Page. 550-554
Abstract
A large amount of external overpotential is normally required to split water using p-type silicon (p-Si) due to the insufficient driving force between the conduction band-edge and the hydrogen evolution level. We demonstrate how inserting an Al2O3 interlayer between p-Si and the electrolyte mitigates the requirement of overpotentials. Since the Al2O3 film decreased the number of interface defect states, electrons were observed to migrate into the Si surface so that negative charges accumulated at the band-edge of silicon. This resulted in band bending enhancement and a reduction of the overpotential requirement. In our result, the overpotential of similar to 150 mV was reduced at a current density of 20 mA/cm(2), and the onset voltage of similar to 70 mV was also reduced at the 1.4 nm thickness of Al2O3 interlayer. (C) 2016 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0040609016305284http://repository.hanyang.ac.kr/handle/20.500.11754/69311
ISSN
0040-6090
DOI
10.1016/j.tsf.2016.09.020
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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