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텅스텐 화학적 기계적 연마 중 평탄화 성능 개선을 위한 계면활성제 첨가 실리카 슬러리 연구

Title
텅스텐 화학적 기계적 연마 중 평탄화 성능 개선을 위한 계면활성제 첨가 실리카 슬러리 연구
Other Titles
Study on silica slurry with surface active agent for improving planarization performance in tungsten chemical mechanical polishing (CMP)
Author
유경태
Alternative Author(s)
You, Keung Tae
Advisor(s)
송태섭
Issue Date
2018-02
Publisher
한양대학교
Degree
Master
Abstract
With shrinkage of the minimum feature size to sub-14 nm, grain topography and protrusion/dishing issues in chemical mechanical planarization (CMP) processes have become increasingly important to address. In this study, we propose an advanced slurry formulation with a surface active agent to improving planarization performance in tungsten chemical mechanical polishing (CMP). We first studied slurries to remove nano topography caused by tungsten (W) grains. W topography creates a large error in the patterning process, which causes device performance problems. Therefore, the smaller the size of the device, the more important is the removal of the W topography. This research suggests ways to reduce nano topography that can become a problem in increasingly sophisticated semiconductor processes. When a surfactant is added, the polishing of W shows non-Prestonian behavior. This allows removal of the topography without loss of W when polished in a relatively high pressure region. To demonstrate this, we observed the CTAB concentration and non-Prestonian behavior in W CMP and observed the roughness change of the surface through AFM (Atomic Force Microscopy). Second, we studied nano-sized protrusions around the gate after Bulk CMP due to differences in material properties between W and silicon oxide (SiO2). In the presence of surface active agent, blanket removal rates on both W and SiO2 films showed non-Prestonian behavior at a low threshold pressure, which is explained by adsorption characteristics of the surface active agent on the films. To study the effect of the surface active agent on W protrusion, W-patterned wafers were polished at the threshold pressure. As the concentration of the surface active agent increased from 0 to 12 mM, W protrusion from patterns with line/space widths of 0.5 µm/0.5 µm decreased significantly from 186 to 30 Å. The mechanism on the significant decrease in W protrusion behavior in the presence of the surface active agent is discussed.
URI
http://www.dcollection.net/handler/hanyang/000000104762http://repository.hanyang.ac.kr/handle/20.500.11754/69259
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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