Si 및 InGaAs 소자의 후속 열처리에 따른 특성 평가

Abstract

The Effect of Post Deposition Annealing (PDA) is important for Metal Oxide Semiconductor(MOS) Device process. To optimize the electrical properties and improvement of device, post deposition annealing is a conventional method than other process. However, understanding the effect of post annealing on the device performance in order to fabricate a reliable and optimize electrical characteristic is necessary for developing the device performance. In this work we investigated the Effect of deuterium anneal on p-type Si TFET with HfO2 and HfAlOx as gate dielectrics. The Si based TFET has been annealed in deturimum (D2) ambient by keeping different gas pressure(1atm, 3atm, 5atm, and 10atm) at the temperature of 400℃. It is observed that the devices annealed at higher pressure (5-10atm) exhibited 15~18% improvement of Subthreshold swing (SS) in HfAlOx and HfO2 dielectric p-TFET as compared the that of non annealed device. In addition Threshold Voltage (VT) positive shift and Ion/Ioff ratio are improved. Finally, we investigated the annealing effect of N2 and forming gas on In0.53Ga0.47As Metal-Oxide-Semiconductor (MOS) capacitor with high-k (HfO2) dielectric. The improved electrical characteristics are observed in the forming gas post-annealing as compared to that of N2 ambient annealing. It is observed that for the constant gate voltage stress, forming gas annealing sample showed much better stress stability than N2 annealing sample in interface quality. For the further discussion of these results, Energy Dispersive Spectrometer (EDS) was measured. According to EDS analysis, the atomic weight of O2 shows the densification of HfO2 and block the In0.53Ga0.47As element in forming gas annealing. Forming gas annealing is an appropriate annealing gas process for In0.53Ga0.47As.