Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-04-16T05:00:47Z | - |
dc.date.available | 2018-04-16T05:00:47Z | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.51, No.1 [2012], p015601 ~ 0156014 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.51.015601/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/67910 | - |
dc.description.abstract | This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (mu(FE)) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm(2) V-1 s(-1) and 1.26 V/decade, respectively, compared to those (13.72 cm(2) V-1 s(-1) and 0.38 V/decade) for the a-IGZO TFTs. The decreased mu(FE) is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST, No. 2007-0055837). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP Publishing | en_US |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTORS | en_US |
dc.title | Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1143/JJAP.51.015601 | - |
dc.relation.page | 1-1 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Ahn, B.D. | - |
dc.contributor.googleauthor | Shin, H.S. | - |
dc.contributor.googleauthor | Kim, D.L. | - |
dc.contributor.googleauthor | Lee, S.M. | - |
dc.contributor.googleauthor | Park, J.-S. | - |
dc.contributor.googleauthor | Kim, G.H. | - |
dc.contributor.googleauthor | Kim, H.J. | - |
dc.relation.code | 2012217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
dc.identifier.researcherID | 8044372500 | - |
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