Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence

Title
Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence
Other Titles
GaN quantum well structures by using time-resolved photoluminescence
Author
신동수
Keywords
Quantum wells; Light-emitting diodes; Carrier lifetime; Time-resolved photoluminescence
Issue Date
2012-06
Publisher
Korean Physical SOC
Citation
Journal of Korean Physical Socitey, 2012, 60(11), P.1934-1938
Abstract
The nonradiative recombination carrier lifetime in InGaN/GaN quantum wells was measured utilizing a time-resolved photoluminescence measurement. The lifetime was estimated from the final decay stage of the temporal response of the photoluminescence, which is closely related to the nonradiative recombination. The nonradiative recombination carrier lifetime estimated by using the given method showed of relative independence from the carrier density in the quantum well. A study comparing the nonradiative recombination carrier lifetime estimated by using the given method with the results of temperature-dependent photoluminescence and current-dependent electroluminescence measurements at room temperature we performed. This unique method can be very useful for measuring the nonradiative carrier lifetime with good accuracy within a short time.
URI
https://link.springer.com/article/10.3938%2Fjkps.60.1934http://hdl.handle.net/20.500.11754/67856
ISSN
0374-4884
DOI
10.3938/jkps.60.1934
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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