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Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots

Title
Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots
Other Titles
ZnTe quantum dots
Author
김태환
Keywords
Quantum dots; CdTe; Carrier dynamics; Strain; Molecular beam epitaxy
Issue Date
2012-06
Publisher
Elsevier Science B.V
Citation
Journal of Luminescence, 2012, 132(6), P.1581-1583
Abstract
We investigate size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots (QDs) grown using molecular beam epitaxy and atomic layer epitaxy. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy with increasing ZnTe buffer thicknesses. This shift of the PL peak can be attributed to size variation of the CdTe QDs. In particular, carrier dynamics in CdTe QDs grown on various ZnTe buffer layer thicknesses is studied using time-resolved PL measurements. As a result, the decay time of CdTe QDs is shown to increase with increasing ZnTe buffer layer thicknesses due to the reduction of the exciton oscillator strength in the larger QDs. (C) 2012 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0022231312000749?via%3Dihubhttp://hdl.handle.net/20.500.11754/67785
ISSN
0022-2313
DOI
10.1016/j.jlumin.2012.01.054
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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