Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots
- Title
- Size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots
- Other Titles
- ZnTe quantum dots
- Author
- 김태환
- Keywords
- Quantum dots; CdTe; Carrier dynamics; Strain; Molecular beam epitaxy
- Issue Date
- 2012-06
- Publisher
- Elsevier Science B.V
- Citation
- Journal of Luminescence, 2012, 132(6), P.1581-1583
- Abstract
- We investigate size-dependent carrier dynamics in self-assembled CdTe/ZnTe quantum dots (QDs) grown using molecular beam epitaxy and atomic layer epitaxy. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy with increasing ZnTe buffer thicknesses. This shift of the PL peak can be attributed to size variation of the CdTe QDs. In particular, carrier dynamics in CdTe QDs grown on various ZnTe buffer layer thicknesses is studied using time-resolved PL measurements. As a result, the decay time of CdTe QDs is shown to increase with increasing ZnTe buffer layer thicknesses due to the reduction of the exciton oscillator strength in the larger QDs. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0022231312000749?via%3Dihubhttp://hdl.handle.net/20.500.11754/67785
- ISSN
- 0022-2313
- DOI
- 10.1016/j.jlumin.2012.01.054
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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