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Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Title
Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors
Author
백운규
Keywords
LOW-TEMPERATURE FABRICATION; ELECTRONICS; NANOSCALE
Issue Date
2012-03
Publisher
Amer INST Physics
Citation
Journal of Applied Physics Letters, 2012, 100(10), 102108
Abstract
This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm(2) V(-1)s(-1), with on/off current ratios of 10(3) and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (similar to 1.5 mu m) that provide a path to printed transistors with small critical dimensions. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3691177]
URI
https://aip.scitation.org/doi/10.1063/1.3691177http://hdl.handle.net/20.500.11754/67766
ISSN
0003-6951
DOI
10.1063/1.3691177
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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