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The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Title
The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Author
이성재
Keywords
Erbium silicide; Schottky barriers; Metal-oxide-semiconductor field-effect transistors; Short channel; Transmission electron microscopy
Issue Date
2012-01
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Thin Solid Films, 2012, 520(6), P.2166-2169
Abstract
10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 106) with low leakage current less than 10− 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region.
URI
https://www.sciencedirect.com/science/article/pii/S0040609011017305?via%3Dihubhttp://hdl.handle.net/20.500.11754/67748
ISSN
0040-6090
DOI
10.1016/j.tsf.2011.09.081
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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