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Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device

Title
Effect of CdSe nanoparticles in polymethylmethacrylate tunneling layer on the performance of nonvolatile organic memory device
Author
방진호
Keywords
Non-volatile organic memory; CdSe NPs; PMMA
Issue Date
2012-10
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Special issue MNE 2011 - Part II, Microelectronic Engineering, October 2012, 98, p.305-308
Abstract
Organic memory devices based on CdSe nanoparticles (NPs) embedded in polymethylmethacrylate (PMMA) insulating layer are demonstrated. The use of NPs/polymer blend as a tunneling layer for non-volatile organic memory has proven to be an alternative route to manipulate and improve the device characteristics. The memory effect is adjustable upon changing the concentration of CdSe NPs within the PMMA tunneling insulator, and the tunable device performance is ascribed to the different trap densities in floating gate. The capacitance change is analyzed by monitoring the charge transport between pentacene and the CdSe NPs. Our in-depth study reveals that the increase in CdSe NPs leads to a wider memory window and better hysteresis characteristics with a maximum window of −8.6 V at VGS of −30 V for 1 s. This result demonstrates the potential application of organic/inorganic hybrid floating gate structure in organic memory devices.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0167931712003838http://hdl.handle.net/20.500.11754/67361
ISSN
0167-9317
DOI
10.1016/j.mee.2012.07.101
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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