Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering
- Title
- Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering
- Other Titles
- p-Si heterojunction diode by ultra-high vacuum magnetron sputtering
- Author
- 김은규
- Keywords
- Zinc oxide; Heterojunction; Electronic transport; Thin films
- Issue Date
- 2012-06
- Publisher
- Elsevier Science SA
- Citation
- Thin Solid Films, 2012, 520(18), P.5997-6000
- Abstract
- Heterojunction diodes of n-type ZnO were fabricated on a p-type Si(100) substrate using an ultra-high vacuum radio frequency magnetron sputtering method at room temperature. A short-time post-annealing process was performed to prevent inter-diffusion of Zn, dopants, and Si atoms. The post-annealing process at 600 degrees C enhanced the crystallinity of ZnO films and produced a high forward to reverse current ratio of the heterojunction diode with a barrier height of approximately 0.336 eV. A thin SiOx layer at the interface of the ZnO film and Si substrate appeared distinctly at the 600 degrees C annealing, however the post-annealing at 700 degrees C showed an a-(Zn2xSi1-xO2) structure caused by diffusion of silicon into the ZnO film. In the n-ZnO/p-Si sample annealed at 700 degrees C, a rapid change in the barrier height was considered due to the effect of the dopant segregation from the substrate and deformation of the a-SiOx structure. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0040609012006001?via%3Dihubhttp://hdl.handle.net/20.500.11754/67156
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2012.05.026
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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