Study on transparent and flexible memory with metal‐oxide nanocrystals

Abstract

A memory device with the In2O3 nanocrystals embedded in biphenyl‐tertracarboxylic dianhydride‐phenylen diamine (BPDA‐PDA) polyimide layer was fabricated, and its electrical and optical properties were evaluated. The In2O3 nanocrystals showed an irregular spherical shape with the average size and density of about 7 nm and 6×1011 cm−2, respectively. In the structure of BPDA‐PDA polyimide/In2O3 nanocrystals/ZnO/ITO/sapphire, a current bistability by difference resistance appeared in the sweep voltage rage from −7 V to 7 V. Then, the transmittance efficiency of this was measured about 80 % between 440 nm to 800 nm by the ultraviolet‐visible transmittance spectra.