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dc.contributor.author강용수-
dc.date.accessioned2018-04-15T07:32:57Z-
dc.date.available2018-04-15T07:32:57Z-
dc.date.issued2011-06-
dc.identifier.citationApplied Surface Science, 2011, 257(16),p.7245-7253en_US
dc.identifier.issn0169-4332-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0169433211004648-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/66632-
dc.description.abstractNanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (sigma(ac)) is found to be proportional to angular frequency (omega(s)). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoenen_US
dc.publisherElsevier Science B.V., Amsterdam.en_US
dc.subjectSemiconductoren_US
dc.subjectThin filmen_US
dc.subjectBismuth sulfideen_US
dc.subjectDielectric propertyen_US
dc.subjectRelaxation propertyen_US
dc.titleDielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin filmsen_US
dc.typeArticleen_US
dc.relation.no16-
dc.relation.volume257-
dc.identifier.doi10.1016/j.apsusc.2011.03.100-
dc.relation.page7245-7253-
dc.relation.journalAPPLIED SURFACE SCIENCE-
dc.contributor.googleauthorMageshwari, K.-
dc.contributor.googleauthorSathyamoorthy, R.-
dc.contributor.googleauthorSudhagar, P.-
dc.contributor.googleauthorKang, Y. S.-
dc.relation.code2011200877-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidkangys-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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