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Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites

Title
Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites
Other Titles
poly(methylmethacrylate) nanocomposites
Author
김태환
Keywords
QUANTUM DOTS; NANOCRYSTALS; ELEMENTS; LAYER
Issue Date
2011-06
Publisher
AMERICAN INSTITUTE OF PHYSICS
Citation
Applied physics letters, 2011, 98(24), pp.243306
Abstract
Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/p-Si and Al/CdTe-CdSe nanoparticles embedded in PMMA/p-Si devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe-CdSe nanoparticles was relatively smaller than that for the device with the CdTe nanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3596705]
URI
https://aip.scitation.org/doi/abs/10.1063/1.3596705http://hdl.handle.net/20.500.11754/66555
ISSN
0003-6951
DOI
10.1063/1.3596705
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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