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Resistive-Switching Memory Effect of Hybrid Structures with Polyimide and SnO2 Nanocrystals

Title
Resistive-Switching Memory Effect of Hybrid Structures with Polyimide and SnO2 Nanocrystals
Author
김영호
Keywords
Nanocrystals; SnO2; Nonvolatile Memory; Polyimide
Issue Date
2012-07
Publisher
AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Citation
Journal of Nanoscience and Nanotechnology, 2012, 12(7), P.5449~5501
Abstract
Hybrid memory devices with polyimide and SnO2 nanocrystals on a flexible polyethersulphone substrate have shown a memristor behavior from current-voltage (I-V) measurements. The resistive-switching effects with a current bistability appeared during cycling voltage sweeping within the range of +/- 4 V. This I-V switching effect might have originated from a resistance fluctuation due to the charge trapping into the SnO2 nanocrystals as well as the oxygen vacancies of the ZnO layer and aluminum oxides that were formed between the polyimide and the interface of the Al gate electrode. In the bipolar resistance-switching behavior, the ratio of the high- and low-resistance state currents was about 3.7 x 10(4) at 1 V.
URI
http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000007/art00057http://hdl.handle.net/20.500.11754/66409
ISSN
1533-4880
DOI
10.1166/jnn.2012.6235
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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