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A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays

Title
A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays
Author
권오경
Keywords
Displays; high-resolution imaging; organic light-emitting diodes (OLEDs); thin-film transistors (TFTs)
Issue Date
2012-07
Publisher
IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
Citation
IEEE electron device letters, 2012, 33(7), P.1018-1020
Abstract
A simple pixel structure comprising two transistors and one capacitor and a novel driving method are proposed for small-sized and high-resolution active-matrix organic light-emitting diode displays on polycrystalline-silicon thin-film transistor (TFT) backplane. The proposed pixel increases the yield due to small number of TFTs and improves image quality by compensating threshold voltage variations of driving TFTs. The proposed pixel is designed as test pixels with 353 pixels per inch, and the measured emission current error range of -74.2%-60.6% is improved to the range of -2.5%-2.1% when the proposed pixel is used.
URI
https://ieeexplore.ieee.org/document/6213488/http://hdl.handle.net/20.500.11754/66402
ISSN
0741-3106
DOI
10.1109/LED.2012.2196752
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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