81 0

Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films

Title
Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
Author
전형탁
Keywords
SUBCUTANEOUS OXIDATION; SILICON DIOXIDE; COUPLED PLASMA; ENERGY
Issue Date
2011-01
Publisher
ELECTROCHEMICAL SOCIETY INC
Citation
Journal of the Electrochemical Society,Vol.158 No.1 [2011],H21
Abstract
Direct current biased remote plasma atomic layer deposition (RPALD) was developed and applied to deposit HfO2 films, and these results were compared with those of RPALD. DC biased RPALD system exhibits effective features that allow the plasma density to be controlled by dc bias. When dc bias was applied to the radio frequency (RF) plasma, the amount of free radicals and ions were increased. The electrical properties of HfO2, such as the effective oxide thickness (EOT) and the breakdown voltage, were improved by dc bias when compared to those of RPALD. This is due to the relatively high amount of free radicals controlled by dc bias. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3511769] All rights reserved.
URI
http://jes.ecsdl.org/cgi/collection/glenn_e_stoner_collectionhttp://hdl.handle.net/20.500.11754/65942
ISSN
0013-4651
DOI
10.1149/1.3511769
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE