Feasibility of a new absorber material for high NA extreme ultraviolet lithography

Title
Feasibility of a new absorber material for high NA extreme ultraviolet lithography
Author
오혜근
Keywords
EUVL; high NA; PSM; thin absorber
Issue Date
2016-03
Publisher
SPIE
Citation
Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97762J (2016), Page. 1-6
Abstract
The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO2) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO2 absorber compared to the other materials such as TaN and TaBN.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9776/1/Feasibility-of-a-new-absorber-material-for-high-NA-extreme/10.1117/12.2219576.full?SSO=1http://hdl.handle.net/20.500.11754/65533
ISBN
9781510600119
ISSN
1996-756X; 0277-786X
DOI
10.1117/12.2219576
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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