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Stress-induced pellicle analysis for extreme-ultraviolet lithography

Title
Stress-induced pellicle analysis for extreme-ultraviolet lithography
Author
오혜근
Keywords
Cycle; EUV; Pellicle; Stress
Issue Date
2016-03
Publisher
SPIE
Citation
Extreme Ultraviolet (EUV) Lithography VII. (Proceedings of SPIE - The International Society for Optical Engineering, 2016, 9776), Page. 1-5
Abstract
The defect on the extreme ultraviolet (EUV) mask can cause image quality degradation on the wafer and also poses a serious problem for achieving high volume manufacturing (HVM). Using a pellicle could decrease the critical size of a defect by taking the defect away from the focal plane of a mask. Considering the double pass transmission for the thickness of extreme ultraviolet lithography EUVL pellicle should be ~ nm thin. For ~ nm thin pellicle, the thermal stress by EUV light exposure may damage the pellicle. Therefore, an investigation of thermal stress is desired for reliable EUV light transmission through pellicle. Therefore, we calculated the total stress and compared with material maximum stress of the pellicle. Breaking or the safety of the pellicle could be determined by the induced total stress, however, the cyclic exposure heating could decrease the material maximum stress of the pellicle. The c-Si (crystalline silicon) has good mechanical durability than the p-Si (poly-crystalline silicon) under cyclic thermal exposure. Stress-induced pellicle analysis for extreme-ultraviolet.... Available from: https://www.researchgate.net/publication/299644663_Stress-induced_pellicle_analysis_for_extreme-ultraviolet_lithography [accessed Apr 03 2018].
URI
https://www.researchgate.net/publication/299644663_Stress-induced_pellicle_analysis_for_extreme-ultraviolet_lithographyhttp://hdl.handle.net/20.500.11754/65530
ISBN
9781510600119
ISSN
1996-756X; 0277-786X
DOI
10.1117/12.2218219
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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