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Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

Title
Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process
Author
강보수
Keywords
Unipolar resistance switching; Current-biased set process; NiO thin film; RESISTIVE MEMORY; HIGH-DENSITY; FILMS; LAYER
Issue Date
2016-06
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 68, No. 12, Page. 1467-1471
Abstract
The set process in a unipolar resistance switching Pt/NiO/Pt thin film was conducted in two different ways: the current-biased set process (current sweep mode) and the voltage-biased set process (voltage sweep mode). In the current-biased set process, a compliance current setting was not necessary for continuing stable resistance switching. The resistance of the low resistance state, the reset and the set switching parameters were compared in both modes of the set processes. The distributions of the set parameters were found to be effectively reduced in the current-biased set process. These intriguing properties can be attributed to the prevention of an overshoot current during the set transition.
URI
https://link.springer.com/article/10.3938/jkps.68.1467http://hdl.handle.net/20.500.11754/65447
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.68.1467
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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