Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process

Title
Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process
Author
박진구
Keywords
Chemical mechanical planarization (CMP); Cu-BTA complex; Corrosion inhibition; Electrochemical impedance spectroscopy; Electrical equivalent circuit modeling
Issue Date
2016-05
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v. 384, Page. 505-510
Abstract
The effect of Cu surface conditions on Cu-BTA complex formation was investigated using contact angle, electrochemical impedance spectroscopy, spectroscopic ellipsometry and XPS measurements which is of interest to Cu Chemical Mechanical Planarization (CMP) process. During Cu CMP process BTA is widely used as a corrosion inhibitor, reacts with Cu and forms a strong Cu-BTA complex. Thus, it is very essential to remove Cu-BTA complex during post-Cu CMP cleaning process as Cu-BTA complex causes severe problems such as particle contamination and watermark due to its hydrophobic nature. In this report, the Cu-BTA complex formation at various Cu surfaces (as received, pure Cu and Cu oxide) was investigated in order to understand its adsorption reaction and develop effective post-Cu CMP cleaning process. (C) 2016 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0169433216311254?via%3Dihubhttp://hdl.handle.net/20.500.11754/65430
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2016.05.106
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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